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Journal of Materials Science: Materials in Electronics

Volumn 21, Issue 9, 2010, Pages 917-925

Impact of joint materials on the reliability of double-side packaged SiC power devices during high temperature aging

(5) Lang, Fengqun a Nakagawa, Hiroshi a Aoyagi, Masahiro a Ohashi, Hiromichi a Yamaguchi, Hiroshi a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER HIGH TEMPERATURE; AGING TIME; ELECTRICAL RESISTANCES; FRACTURE MODE; HIGH TEMPERATURE; HIGH TEMPERATURE AGING; JOINT RELIABILITY; MECHANICAL ANALYSIS; MECHANICAL AND ELECTRICAL PROPERTIES; PACKAGED DEVICE; POWER DEVICES;

ELECTRIC EQUIPMENT; ELECTRIC PROPERTIES; LEAD; MECHANICAL PROPERTIES; PACKAGING MATERIALS; RELIABILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILVER; SOLDERING ALLOYS;

TIN;

EID: 77955469732 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-009-0018-x Document Type: Article

Times cited : (13)

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