Hard switched MOSFET inverter for elevated temperature applications

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2008, Pages 3184-3190

  Ahmed, Shehab ^a  

^a TEXAS A AND M UNIVERSITY AT QATAR   (Qatar)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING SYSTEMS; DECISION MAKING; FLOW INTERACTIONS; NONMETALS; PLANNING; POWER ELECTRONICS; QUALITY ASSURANCE; RELIABILITY; RESOURCE ALLOCATION; SILICON; SILICON CARBIDE; TECHNOLOGY;

ACTIVE COOLING; DIFFERENT OPERATING CONDITIONS; ELEVATED TEMPERATURES; EQUIVALENT CIRCUIT MODELING; FEASIBILITY STUDIES; MARKET ENTRY; POWER DEVICES; POWER ELECTRONIC SYSTEMS; SILICON CARBIDE (SIC); TECHNOLOGY GAP; WIDESPREAD USE;

FAILURE ANALYSIS;

EID: 52349109371     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2008.4592443     Document Type: Conference Paper

References (6)

1. R. M. Nelms, and R. W. Johnson, "200°C Operation of a 500-W DC-DC Converter Utilizing Power Mosfets," IEEE Trans. on Industry Applications, vol. 33, No. 5, pp. 1267-1272, Sept./Oct. 1997.
2. R. W. Johnson, J. R. Bromstead, and G. B. Weir, "200°C Operation of Semiconductor Power Devices," IEEE Trans. on Components, Hybrids, and Manufacturing Technology, vol. 16, No. 7, pp. 759-764, Nov. 1993.
3. C. V. Godbold, and J. L. Hudgins, "Temperature Variation Effects in MCTs, IGBTs, and BMFETs," in Proc. 1993 IEEE Power Electronics Specialists Conf., pp. 93-98.
4. P. McCluskey, R. R. Grzybowski, L. Condra, D. Das, J. Fink, J. Jordan, T. Torri, "Reliability Concerns in High Temperature Electronic Systems," in Proc. 1998 IEEE High Temperature Electronic Materials, Devices and Sensors Conf., pp. 199-206.
5. A. M. Abou-Alfotouh, "Characterization of silicon carbide power semiconductor schottky diodes and JFETs for high-switching frequency applications," Ph.D. dissertation, Dept. Elect. Eng., University of Kentucky, USA, 2004.
6. P. J. Viverge, J. J. Rousseau, J. P. Chante, and B. Allard, "Low Power Converter for high temperature applications," in Proc. 1993 European Conference on Power Electronics and Applications., pp. 232-236.