High-power robust semiconductor electronics technologies in the new millennium

Microelectronics Journal

Volumn 32, Issue 5-6, 2001, Pages 397-408

  Shenai, K ^a  

^a 1120 Science and Engineering Offices   (United States)

Author keywords

Modeling; Power electronics; Power semiconductor devices; Power semiconductor materials; Reliability; Silicon; Wide energy band gap materials

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ELECTRIC NETWORK TOPOLOGY; ENERGY GAP; POWER CONVERTERS; RESIDUAL STRESSES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SWITCHING CIRCUITS;

WIDE ENERGY BAND GAP MATERIALS;

POWER ELECTRONICS;

EID: 0035333517     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(01)00010-6     Document Type: Article

References (31)

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5. Future role of power electronics in power systems
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7. Synchronous rectifier versus Schottky diodes
8. A new generation of high-voltage MOSFETs breaks the limit line of silicon
9. A new concept for non-punch-through IGBT with MOSFET like switching characteristics
10. Analysis of device structures for next generation IGBT
11. Evaluation of planar and trench IGBT for hard- and soft-switching performance
12. MOS controlled thyristor - A new class of power devices
13. A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor
14. IGCT - A new emerging technology for high power, low cost inverters
15. 4 kV insulated gate controlled thyristor with low on-state voltage drop
16. Designing intelligent muscle into industrial motion control
17. Optimum semiconductors for high-power electronics
18. Silicon carbide high-power devices
19. Study of bulk and elementary screw dislocation assisted reverse breakdown in low voltage (250 V) 4H-SiC p+n junction diodes - Part I DC properties
20. Characterization and modeling of high-voltage SiC PN diode
21. 4H-SiC power switching devices
22. Silicon carbide power electronics for high-temperature applications
23. High temperature performance of hybrid GaN/SiC high power diodes
24. Made-to-order power electronics
25. Zero switching loss inverters for high power applications
26. Internal dynamics of IGBT under zero-voltage and zero-current switching condition
27. On the reliability of dc-dc converters
28. Dynamic SOA of power MOSFETs
29. High-power solid-state devices and smart-power ICs
30. Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress