Energy-band structure in strained silicon: A 20-band k·p and Bir-Pikus Hamiltonian model

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1795-1799

  Richard, Soline ^a   Aniel, Frédéric ^a   Fishman, Guy ^a   Cavassilas, Nicolas ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HAMILTONIANS; HOT CARRIERS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; TRANSPORT PROPERTIES;

DEFORMATION POTENTIAL;

BAND STRUCTURE;

EID: 0043013073     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1587004     Document Type: Article

References (15)

1. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974).
2. 4j group.
3. F. Aniel, N. Zerounian, R. Adde, M. Zeuner, T. Hackbarth, and U. König, IEEE Trans. Electron Devices 47, 1477 (2000).
4. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).
5. M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988).
6. N. Cavassilas, F. Aniel, K. Boujdaria, and G. Fishman, Phys. Rev. B 64, 115207 (2001).
7. P. Vogl, H. P. Hjalmarson, and J. D. Dow, J. Phys. Chem. Solids 44, 365 (1983).
8. Semiconductors: Group IV Elements and III-V Compounds, New Series Group III, Vol. 17 Pt. a, edited by O. Madelung, Landolt-Börnstein (Springer, Berlin, 1982); Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, New Series, Group III Vol. 22 Pt. a, edited by O. Madelung, Landolt-Börnstein (Springer, Berlin, 1987).
9. Semiconductors: Group IV Elements and III-V Compounds, New Series Group III, Vol. 17 Pt. a, edited by O. Madelung, Landolt-Börnstein (Springer, Berlin, 1982); Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, New Series, Group III Vol. 22 Pt. a, edited by O. Madelung, Landolt-Börnstein (Springer, Berlin, 1987).
10. M. L. Cohen and J. R. Chelikowsky, Electronic Structure and Optical Properties of Semiconductors, Springer Series in Solid State Sciences, edited by M. Cardona (Springer, New York, 1989).
11. S. Y. Ren, X. Chen, and J. D. Dow, J. Phys. Chem. Solids 59, 403 (1998).
12. J. P. Dismukes, L. Ekstrom, and L. J. Paff, J. Phys. Chem. 68, 3021 (1964).
13. A. Blacha, H. Presting, and M. Cardona, Phys. Status Solidi B 126, 11 (1984).
14. M. M. Rieger and P. Vogl, Phys. Rev. B 48, 14276 (1993).
15. F. Schäffler, Semicond. Sci. Technol. 12, 1515 (1997).