Symmetry in strain engineering of nanomembranes: Making new strained materials

ACS Nano

Volumn 5, Issue 7, 2011, Pages 5532-5542

  Paskiewicz, Deborah M ^a   Scott, Shelley A ^a   Savage, Donald E ^a   Celler, George K ^b   Lagally, Max G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

elastic relaxation; epitaxy; heterostructures; nanomembranes; strain sharing; thin films

Indexed keywords

BULK MATERIALS; ELASTIC RELAXATION; ELASTIC STRAIN; EXTENDED DEFECT; ISOTROPIC AND ANISOTROPIC MATERIALS; MATERIAL CHANGE; NANOMEMBRANES; SI(110); SINGLE-CRYSTAL MATERIALS; STRAIN DISTRIBUTIONS; STRAIN ENGINEERING; SYMMETRIC SYSTEMS; TRILAYERS; TUNABILITIES;

CRYSTAL SYMMETRY; FILMS; GERMANIUM; NANOSTRUCTURES; SILICON;

STRAIN;

EID: 79961057474     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2009672     Document Type: Conference Paper

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