Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(1 1 0) substrates by gas-source MBE

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 343-348

  Arimoto, Keisuke ^a   Yamanaka, Junji ^a   Nakagawa, Kiyokazu ^a   Sawano, Kentarou ^b   Shiraki, Yasuhiro ^b   Usami, Noritaka ^c   Nakajima, Kazuo ^c  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Germanium silicon alloys

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUFFER STORAGE; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

GERMANIUM SILICON ALLOYS; MOSAIC STRUCTURES; TEMPERATURE DEPENDENCE;

CRYSTAL LATTICES;

EID: 33947321715     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.135     Document Type: Article

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