A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si(001)

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 593-599

  Liu, B Z ^a   Nogami, J ^a  

^a Michigan State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

LATTICE MISMATCH; NANOWIRES;

DYSPROSIUM COMPOUNDS;

EID: 0037254375     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516621     Document Type: Article

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