Si/Ge junctions formed by nanomembrane bonding

ACS Nano

Volumn 5, Issue 2, 2011, Pages 1179-1189

  Kiefer, Arnold M ^a   Paskiewicz, Deborah M ^a   Clausen, Anna M ^a   Buchwald, Walter R ^b   Soref, Richard A ^b   Lagally, Max G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

bonding; germanium; heterojunction; nanomembrane; semiconductor; silicon

Indexed keywords

BI-LAYER; BONDING BEHAVIOR; COEFFICIENT OF THERMAL EXPANSION; DEGREE OF CRYSTALLINITY; ELECTRICAL TRANSPORT; HIGH QUALITY; HYDROPHOBIC BONDING; INTERFACIAL REGION; LOW TEMPERATURES; MONOCRYSTALLINE; NANOMEMBRANES; NONLINEAR TRANSPORT; SEMICONDUCTOR; SI(0 0 1); SI/GE; TEMPERATURE CHANGES; THERMAL EXPANSION COEFFICIENTS; TUNNELING MODELS;

GERMANIUM; HETEROJUNCTIONS; LATTICE MISMATCH; NANOSTRUCTURES; ORGANIC POLYMERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; WAFER BONDING;

THERMAL EXPANSION;

EID: 79951867559     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn103149c     Document Type: Article

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