Oxides heterostructures for nanoelectronics

International Journal of Nanotechnology

Volumn 7, Issue 4-8, 2010, Pages 320-347

  Dubourdieu, C ^a   Gelard I ^a   Salicio, O ^a   Saint Girons, G ^b   Vilquin, B ^b   Hollinger, G ^b  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Epitaxy; Functional; Heterostructure; Interface; Interface engineering; MBE; MOCVD; Nanostructure; Oxide; Perovskite; Silicon; Thin film

Indexed keywords

ALUMINUM COMPOUNDS; BUFFER LAYERS; EPITAXIAL GROWTH; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; INTEGRATION; INTERFACES (MATERIALS); MAGNESIA; MANGANESE COMPOUNDS; MANGANITES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NANOELECTRONICS; NANOSTRUCTURES; OXIDE FILMS; OXIDES; PEROVSKITE; PEROVSKITE SOLAR CELLS; RHENIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SILICATES; SILICON; SILICON WAFERS; STRONTIUM TITANATES; THIN FILMS;

FUNCTIONAL; INTERFACE ENGINEERING; LIQUID-INJECTION MOCVD; MAGNETIC AND ELECTRICAL PROPERTIES; MODERATE TEMPERATURE; MONOLITHIC INTEGRATION; NANOELECTRONIC APPLICATIONS; OXIDE HETEROSTRUCTURES;

LANTHANUM COMPOUNDS;

EID: 77649108601     PISSN: 14757435     EISSN: None     Source Type: Journal    
DOI: 10.1504/IJNT.2010.031723     Document Type: Article

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