Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

Applied Physics Letters

Volumn 69, Issue 6, 1996, Pages 740-742

  Shan, W ^a   Fischer, A J ^a   Song, J J ^a   Bulman, G E ^b   Kong, H S ^b   Leonard, M T ^b   Perry, W G ^c   Bremser, M D ^c   Davis, R F ^c  

^a OKLAHOMA STATE UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON EMISSION; ELECTRON TRANSITIONS; EXCITONS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SPECTROSCOPY; SUBSTRATES;

EXCITON DECAY DYNAMICS; EXCITON TRANSITIONS; INTRINSIC FREE EXCITONS; PICOSECOND RELAXATION; RADIATIVE RECOMBINATION RATE; REFLECTANCE MEASUREMENTS; SEMICONDUCTING ALUMINUM GALLIUM NITRIDE; SEMICONDUCTING GALLIUM NITRIDE; SURFACE RECOMBINATION RATE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030570644     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117876     Document Type: Article

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