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Volumn 1167, Issue , 2009, Pages 3-8
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Utilizing polarization induced band bending for InGaN solar cell design
a
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Author keywords
[No Author keywords available]
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Indexed keywords
GALLIUM ALLOYS;
III-V SEMICONDUCTORS;
INDIUM ALLOYS;
OPEN CIRCUIT VOLTAGE;
POLARIZATION;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR ALLOYS;
SUSTAINABLE DEVELOPMENT;
TWO DIMENSIONAL ELECTRON GAS;
DEPLETION REGION;
FERMI LEVEL PINNING;
HALL MEASUREMENTS;
PHOTO-CARRIERS;
POLARIZATION EFFECT;
POLARIZATION FIELD;
SCHOTTKY BARRIERS;
SOLAR CELL DESIGN;
SOLAR CELLS;
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EID: 77950968766
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-1167-o01-04 Document Type: Conference Paper |
Times cited : (3)
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References (11)
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