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Volumn 1167, Issue , 2009, Pages 3-8

Utilizing polarization induced band bending for InGaN solar cell design

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; OPEN CIRCUIT VOLTAGE; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR ALLOYS; SUSTAINABLE DEVELOPMENT; TWO DIMENSIONAL ELECTRON GAS;

EID: 77950968766     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1167-o01-04     Document Type: Conference Paper
Times cited : (3)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.