Utilizing polarization induced band bending for InGaN solar cell design

Materials Research Society Symposium Proceedings

Volumn 1167, Issue , 2009, Pages 3-8

  Jampana, Balakrishnam R ^a   Ferguson, Ian T ^b   Opila, Robert L ^a   Honsberg, Christiana B ^c  

^a UNIVERSITY OF DELAWARE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c AZ 85281   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; OPEN CIRCUIT VOLTAGE; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR ALLOYS; SUSTAINABLE DEVELOPMENT; TWO DIMENSIONAL ELECTRON GAS;

DEPLETION REGION; FERMI LEVEL PINNING; HALL MEASUREMENTS; PHOTO-CARRIERS; POLARIZATION EFFECT; POLARIZATION FIELD; SCHOTTKY BARRIERS; SOLAR CELL DESIGN;

SOLAR CELLS;

EID: 77950968766     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1167-o01-04     Document Type: Conference Paper

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