Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation

Surface Science

Volumn 605, Issue 19-20, 2011, Pages 1778-1783

  Merckling, C ^a   Chang, Y C ^b,c   Lu, C Y ^d   Penaud, J ^e   Brammertz, G ^a   Scarrozza, M ^a   Pourtois, G ^a   Kwo, J ^b   Hong, M ^b   Dekoster, J ^a   Meuris, M ^a   Heyns, M ^a,c   Caymax, M ^a  

^a IMEC   (Belgium)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^e Riber   (France)

Author keywords

CMOS; GaAs; H2S passivation; High dielectrics; Molecular beam epitaxy

Indexed keywords

CMOS; DENSITY REDUCTION; DEVICE-SCALING; DRIVE CURRENTS; ELECTRICAL PASSIVATION; GAAS; GAAS SURFACES; GAAS(001); H2S PASSIVATION; HIGH MOBILITY; IN-SITU; INTERFACE STATE DENSITY; XPS ANALYSIS;

CARRIER MOBILITY; DEFECT DENSITY; DIELECTRIC MATERIALS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GATE DIELECTRICS; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOS CAPACITORS; PHASE CHANGE MEMORY; SEMICONDUCTING GALLIUM; SURFACE TREATMENT;

PASSIVATION;

EID: 79961024710     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.06.008     Document Type: Article

References (30)

1. A. Dimoulas, E. Gusev, P.C. McIntyre, and M. Heyns Advanced Gate Stacks for High Mobility Semiconductors 2007 Springer
2. M. Heyns, M. Meuris, and M. Caymax ECS Trans. 3 2006 511
3. G. Brammertz, H.C. Lin, K. Martens, D. Mercier, S. Sioncke, A. Delabie, W.E. Wang, M. Caymax, M. Meuris, and M. Heyns Appl. Phys. Lett. 93 2008 183504
4. Y.C. Chang, C. Merckling, J. Penaud, C.Y. Lu, W.-E. Wang, J. Dekoster, M. Meuris, M. Caymax, M. Heyns, J. Kwo, and M. Hong Appl. Phys. Lett. 97 2010 112901
5. A. Callegari, P.D. Hoh, D.A. Buchanan, and D. Lacey Appl. Phys. Lett. 54 1989 332
6. R. Droopad, K. Rajagopalan, J. Abrokwah, L. Adams, N. England, D. Uebelhoer, P. Fejes, P. Zurcher, and M. Passlack J. Cryst. Growth 301-302 2007 139
7. M. Hong, J. Kwo, A.R. Kortan, J.P. Mannaerts, and A.M. Sergent Science 1999 1897 283
8. M. Passlack, M. Hong, and J.P. Mannaerts Appl. Phys. Lett. 68 1996 1099
9. M.J. Hale, S.I. Yi, J.S. Sexton, A.C. Kummel, and M. Passlack J. Chem. Phys. 119 2003 6719
10. J.P. de Souza, E. Kiewra, Y. Sun, A. Callegari, D.K. Sadana, G. Shahidi, D.J. Webb, J. Fompeyrine, R. Germann, C. Rossel, and C. Marchiori Appl. Phys. Lett. 92 2008 153508
11. H.-S. Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, J.C. Lee, J. Oh, and P. Majhi Appl. Phys. Lett. 92 2008 032907
12. K. Martens, C.O. Chui, G. Brammertz, B. De Jaeger, D. Kuzum, M. Heyns, T. Krishnamohan, K. Saraswat, H. Maes, and G. Groeseneken IEEE Trans. Electron Devices 55 2008 547
13. V.N. Bessolov, and M.V. Lebedev Semiconductors 32 1998 1141
14. C.L. Hinkle, M. Milojevic, B. Brennan, A.M. Sonnet, F.S. Aguirre-Tostado, G.J. Hughes, E.M. Vogel, and R.M. Wallace Appl. Phys. Lett. 94 2009 162101
15. H.-C. Lin, W. Wang, G. Brammertz, M. Meuris, and M. Heyns Microelectron. Eng. 86 2009 1554
16. M. Xu, Y.Q. Wu, O. Koybasi, T. Shen, and P.D. Ye Appl. Phys. Lett. 94 2009 212104
17. D. Lin, G. Brammertz, S. Sioncke, C. Fleischmann, A. Delabie, K. Martens, H. Bender, T. Conard, W.H. Tseng, J.C. Lin, W.E. Wang, K. Temst, A. Vatomme, J. Mitard, M. Caymax, M. Meuris, M. Heyns, and T. Hoffmann IEDM Tech. Dig 2009
18. A. Delabie, D. Brunco, T. Conard, P. Favia, H. Bender, A. Franquet, S. Sioncke, W. Vandervorst, S. Van Elshocht, M. Heyns, M. Meuris, E. Kim, P. McIntyre, K. Saraswat, J. LeBeau, J. Cagnon, S. Stemmer, and W. Tsai J. Electrochem. Soc. 155 2008 H937
19. J. Massies, F. Dezaly, and N.T. Linh J. Vac. Sci. Technol. 17 1980 1134
20. J. Souda, Y. Kawakami, S. Fujita, and S. Fujita Jpn. J. Appl. Phys. 35 1996 L1498
21. G. Brammertz, K. Martens, S. Sioncke, A. Delabie, M. Caymax, M. Meuris, and M. Heyns Appl. Phys. Lett. 91 2007 133510
22. X.S. Wang, and W.H. Weinberg J. Appl. Phys. 75 1994 2715
23. K.N. Ow, and X.W. Wang Phys. Rev. B 54 1996 17661
24. S.-F. Ren, and Y.-C. Chang Phys. Rev. B 41 1990 7705
25. T. Ohno, and K. Shiraishi Phys. Rev. B 42 1990 11194
26. C. Merckling, J. Penaud, F. Bellenger, D. Kohen, G. Pourtois, G. Brammertz, M. Scarrozza, M. El-Kazzi, M. Houssa, J. Dekoster, M. Caymax, M. Meuris, and M.M. Heyns MRS Symp. Proc. 1155 2009 C06
27. C. Merckling, J. Penaud, D. Kohen, F. Bellenger, A. Alian, G. Brammertz, M. El-Kazzi, M. Houssa, J. Dekoster, M. Caymax, M. Meuris, and M.M. Heyns Microelectron. Eng. 86 2009 1592
28. W.E. Spicer, P.W. Chye, P.R. Skeath, C.Y. Su, and I. Lindau J. Vac. Sci. Technol. 16 1979 1422
29. W.E. Spicer, Z. Liliental-Weber, E. Weber, N. Newman, T. Kendelewicz, R. Cao, C. McCants, P. Mahowald, K. Miyano, and I. Lindau J. Vac. Sci. Technol. B 6 1988 1245
30. J.M. Soler, E. Artacho, J.D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal J. Phys. C: Cond. Matter 14 2002 2745