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Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 435-439

Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface

(8) Fusi, M a Lamagna, L a Spiga, S a Fanciulli, M a,c Brammertz, G b Merckling, C b Meuris, M b Molle, A a

a LABORATORIO MDM (Italy)

b IMEC (Belgium)

c UNIVERSITY OF MILANO BICOCCA (Italy)

Author keywords

High mobility semiconductors; III V Semiconductors; Molecular beam deposition (MBD); Passivation

Indexed keywords

ATOMIC OXYGEN; CHEMICAL QUALITY; HIGH-MOBILITY SEMICONDUCTORS; III-V SEMICONDUCTORS; IN-SITU; INTERFACE CHEMISTRY; INTERFACE COMPOSITION; INTERFACE OXIDE; INTERFACE PASSIVATION; MOLECULAR BEAM DEPOSITION; MOLECULAR BEAM DEPOSITION (MBD); OXYGEN BONDING; PURE AL;

ALUMINUM; BELT DRIVES; CHEMICAL MODIFICATION; GERMANIUM; INTERCALATION; LEAD OXIDE; MOLECULAR BEAMS; OXYGEN; SUBSTRATES;

PASSIVATION;

EID: 79751535572 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.11.015 Document Type: Conference Paper

Times cited : (4)

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