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Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1514-1519

Applications of TEM imaging, analysis and electron holography to III-nitride HEMT devices

(4) Smith, David J a Cullen, David A a Zhou, Lin a McCartney, Martha R a

a ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM DAMAGE; CHEMICAL COMPOSITIONS; DEVICE FAILURES; DEVICE STRUCTURES; DIFFRACTION-CONTRAST IMAGING; ELECTROSTATIC FIELD; ELEMENTAL MAPPING; FIB MILLING; GAN LAYERS; HETEROSTRUCTURES; HIGH RESOLUTION; III-NITRIDE; IMAGING ARTIFACTS; IN-SITU; LOCAL VARIATIONS; NANO SCALE; NANOMETER-SCALE RESOLUTION; OFF-AXIS ELECTRON HOLOGRAPHY; PHASE-CONTRAST IMAGING; POLARIZATION FIELD; PROTECTIVE LAYERS; SAMPLE PREPARATION; STRUCTURAL DAMAGES; SURFACE DAMAGES; TEM; THREADING DISLOCATION; TI/AL/NI/AU;

DAMAGE DETECTION; ELECTRON GAS; ELECTRON HOLOGRAPHY; ELECTRON MOBILITY; ELECTRONS; ELECTROSTATIC DEVICES; GALLIUM NITRIDE; ION BEAMS; IONS; MILLING (MACHINING); OHMIC CONTACTS; PLATINUM; SPECIMEN PREPARATION; TITANIUM NITRIDE; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79960948110 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/j.microrel.2010.07.155 Document Type: Conference Paper

Times cited : (12)

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