SCOPUS 정보 검색 플랫폼

Volumn 107, Issue 8, 2010, Pages

Bias dependent two-channel conduction in InAlN/AlN/GaN structures

(13) Leach, J H a Ni, X a Li, X a Wu, M a Ozgur U a Morko H a Zhou, L b Cullen, D A b Smith, D J b Cheng, H c Kurdak, C c Meyer, J R d Vurgaftman, I d

a Virginia Commonwealth University (United States)

b ARIZONA STATE UNIVERSITY (United States)

c UNIVERSITY OF MICHIGAN (United States)

d NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BAR SAMPLES; BARRIER LAYERS; BENEFICIAL ASPECTS; CARRIER DENSITY; CONDUCTION CHANNEL; FORMATION MECHANISM; GAN LAYERS; HETEROSTRUCTURES; LATTICE STRAIN; MAGNETO-CONDUCTIVITY; MOBILITY SPECTRUM ANALYSIS; POLARIZATION CHARGES; SPACER LAYER; TWO-CHANNEL;

GALLIUM ALLOYS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS;

GALLIUM NITRIDE;

EID: 77952377120 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3330627 Document Type: Article

Times cited : (14)

References (13)

1
- 0035506756
- Power electronics on InAlN/(In)GaN: Prospect for a record performance
- DOI 10.1109/55.962646, PII S0741310601094198
- J. Kuzmik, IEEE Electron Device Lett. EDLEDZ 0741-3106 22, 510 (2001). 10.1109/55.962646 (Pubitemid 33106085)
- (2001) IEEE Electron Device Letters , vol.22 , Issue.11 , pp. 510-512
- Kuzmik, J.¹

2
- 43549122215
- F. Medjdoub, J. -F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, D. Ducatteau, C. Gaquìre, N. Grandjean, and E. Kohn, Tech. Dig. - Int. Electron Devices Meet. 2006, 927.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2006 , pp. 927
- Medjdoub, F.¹ Carlin, J.-F.² Gonschorek, M.³ Feltin, E.⁴ Py, M.A.⁵ Ducatteau, D.⁶ Gaquìre, C.⁷ Grandjean, N.⁸ Kohn, E.⁹

3
- 69949128207
- EDLEDZ 0741-3106. 10.1109/LED.2009.2026718
- J. W. Chung, O. I. Saadat, J. M. Tirado, X. Gao, S. Guo, and T. Palacios, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 904 (2009). 10.1109/LED.2009.2026718
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 904
- Chung, J.W.¹ Saadat, O.I.² Tirado, J.M.³ Gao, X.⁴ Guo, S.⁵ Palacios, T.⁶

4
- 77949663480
- APPLAB 0003-6951. 10.1063/1.3358192
- J. H. Leach, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morko̧, T. Paskova, E. Preble, K. R. Evans, and C. Z. Lu, Appl. Phys. Lett. APPLAB 0003-6951 96, 102109 (2010). 10.1063/1.3358192
- (2010) Appl. Phys. Lett. , vol.96 , pp. 102109
- Leach, J.H.¹ Wu, M.² Ni, X.³ Li, X.⁴ Xie, J.⁵ Özgür, Ü.⁶ Morko̧, H.⁷ Paskova, T.⁸ Preble, E.⁹ Evans, K.R.¹⁰ Lu, C.Z.¹¹

5
- 70350619878
- EDLEDZ 0741-3106. 10.1109/LED.2009.2031659
- M. Alomari, F. Medjdoub, J. -F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, C. Gaquìre, and E. Kohn, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 1131 (2009). 10.1109/LED.2009.2031659
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 1131
- Alomari, M.¹ Medjdoub, F.² Carlin, J.-F.³ Feltin, E.⁴ Grandjean, N.⁵ Chuvilin, A.⁶ Kaiser, U.⁷ Gaquìre, C.⁸ Kohn, E.⁹

6
- 77952373170
- Jeju, Korea, 2009)
- L. Zhou, D. A. Cullen, M. R. McCartney, F. Qian, J. H. Leach, H. Morko̧, and D. J. Smith, " ICNS-8., Jeju, Korea, 2009).
- ICNS-8
- Zhou, L.¹ Cullen, D.A.² McCartney, M.R.³ Qian, F.⁴ Leach, J.H.⁵ Morko̧, H.⁶ Smith, D.J.⁷

7
- 84889452940
- (Wiley, Weinheim)
- H. Morko̧, Handbook of Nitride Semiconductors and Devices (Wiley, Weinheim, 2008).
- (2008) Handbook of Nitride Semiconductors and Devices
- Morko̧, H.¹

8
- 74549117357
- PSSABA 0031-8965. 10.1002/pssa.200925362
- J. H. Leach, M. Wu, X. Ni, X. Li, Ü. Özgür, and H. Morko̧, Phys. Status Solidi A PSSABA 0031-8965 207, 211 (2010). 10.1002/pssa.200925362
- (2010) Phys. Status Solidi A , vol.207 , pp. 211
- Leach, J.H.¹ Wu, M.² Ni, X.³ Li, X.⁴ Özgür, Ü.⁵ Morko̧, H.⁶

9
- 0000377727
- JAPIAU 0021-8979. 10.1063/1.368741
- I. Vurgaftman, J. R. Meyer, C. A. Hoffman, D. Redfern, J. Antoszewski, L. Faraone, and J. R. Lindemuth, J. Appl. Phys. JAPIAU 0021-8979 84, 4966 (1998). 10.1063/1.368741
- (1998) J. Appl. Phys. , vol.84 , pp. 4966
- Vurgaftman, I.¹ Meyer, J.R.² Hoffman, C.A.³ Redfern, D.⁴ Antoszewski, J.⁵ Faraone, L.⁶ Lindemuth, J.R.⁷

10
- 0001027666
- JAPIAU 0021-8979. 10.1063/1.359131
- V. W. L. Chin, B. Zhou, T. L. Tansley, and X. Lu, J. Appl. Phys. JAPIAU 0021-8979 77, 6064 (1995). 10.1063/1.359131
- (1995) J. Appl. Phys. , vol.77 , pp. 6064
- Chin, V.W.L.¹ Zhou, B.² Tansley, T.L.³ Lu, X.⁴

11
- 34848922373
- High electron mobility in nearly lattice-matched AlInNAlNGaN heterostructure field effect transistors
- DOI 10.1063/1.2794419
- J. Q. Xie, X. Ni, M. Wu, J. H. Leach, Ü. Özgür, and H. Morko̧, Appl. Phys. Lett. APPLAB 0003-6951 91, 132116 (2007). 10.1063/1.2794419 (Pubitemid 47502576)
- (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 132116
- Xie, J.¹ Ni, X.² Wu, M.³ Leach, J.H.⁴ Ozgur, U.⁵ Morko, H.⁶

12
- 33747119032
- High electron mobility lattice-matched AllnN/GaN field-effect transistor heterostructures
- DOI 10.1063/1.2335390
- M. Gonschorek, J. -F. Carlin, E. Feltin, M. A. Py, and N. Grandjean, Appl. Phys. Lett. APPLAB 0003-6951 89, 062106 (2006). 10.1063/1.2335390 (Pubitemid 44222934)
- (2006) Applied Physics Letters , vol.89 , Issue.6 , pp. 062106
- Gonschorek, M.¹ Carlin, J.-F.² Feltin, E.³ Py, M.A.⁴ Grandjean, N.⁵

13
- 33747501008
- Nitride-based high electron mobility transistors with a GaN spacer
- DOI 10.1063/1.2335514
- T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, S. P. DenBaars, U. K. Mishra, J. Liberis, O. Kiprijanovic, and A. Matulionis, Appl. Phys. Lett. APPLAB 0003-6951 89, 073508 (2006). 10.1063/1.2335514 (Pubitemid 44259982)
- (2006) Applied Physics Letters , vol.89 , Issue.7 , pp. 073508
- Palacios, T.¹ Shen, L.² Keller, S.³ Chakraborty, A.⁴ Heikman, S.⁵ DenBaars, S.P.⁶ Mishra, U.K.⁷ Liberis, J.⁸ Kiprijanovic, O.⁹ Matulionis, A.¹⁰

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.