Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure

Applied Physics Letters

Volumn 94, Issue 12, 2009, Pages

  Zhou, Lin ^a   Cullen, David A ^a   Smith, David J ^a   McCartney, Martha R ^a   Mouti, Anas ^b   Gonschorek, M ^b   Feltin, E ^b   Carlin, J F ^b   Grandjean, N ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRON GAS; ELECTRON HOLOGRAPHY; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HOLOGRAPHIC INTERFEROMETRY; HOLOGRAPHY; PHASE INTERFACES; POLARIZATION; SEMICONDUCTING GALLIUM;

A DENSITIES; ALN LAYERS; BUILT-IN POTENTIALS; GAN LAYERS; HETEROSTRUCTURE; HIGH ELECTRON MOBILITIES; INDUCED ELECTRIC FIELDS; OFF-AXIS ELECTRON HOLOGRAPHIES; POLARIZATION FIELDS; PROFILE MEASUREMENTS;

TWO DIMENSIONAL ELECTRON GAS;

EID: 63549102865     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3108084     Document Type: Article

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