GaN HEMT thermal behavior and implications for reliability testing and analysis

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2026-2029

  Green, Daniel S ^a   Vembu, Bharath ^a   Hepper, David ^a   Gibb, Shawn R ^a   Jin, Daniel ^a   Vetury, Rama ^a   Shealy, Jeffrey B ^a   Beechem, L Thomas ^b   Graham, Samuel ^b  

^a RF MICRO DEVICES   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS; BASE PLATES; FINITE ELEMENT MODELING; GAN HEMTS; IR IMAGING; MICRO RAMAN MEASUREMENTS; MICRO-RAMAN; PEAK JUNCTION TEMPERATURE; PEAK TEMPERATURES; PHYSICAL MODELING; RELIABILITY TESTING; STRESS CONDITION; STRESS TESTING; STRUCTURAL CHANGE; TEMPERATURE MODELING; THERMAL BEHAVIORS;

GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MODELS; QUALITY ASSURANCE; THERMOGRAPHY (IMAGING);

RELIABILITY ANALYSIS;

EID: 57649205087     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778722     Document Type: Conference Paper

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