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Volumn 158, Issue 9, 2011, Pages

Carrier removal rates and deep traps in neutron irradiated n-GaN films

(9) Lee, In Hwan a Polyakov, A Y a Smirnov, N B b Govorkov, A V b Kozhukhova, E A b Kolin, N G c Boiko, V M c Korulin, A V c Pearton, S J d

a Chonbuk National University (South Korea)

b INSTITUTE OF RARE METALS (Russian Federation)

c KARPOV INSTITUTE OF PHYSICAL CHEMISTRY (Russian Federation)

d J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER REMOVAL RATE; DEEP TRAPS; DISORDERED REGIONS; DONOR DOPING; EPITAXIAL LATERAL OVERGROWTH; HYDRIDE VAPOR PHASE EPITAXY; RADIATION DEFECTS; SHALLOW DONORS; UNDOPED FILMS;

EPITAXIAL FILMS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE;

EID: 79960910477 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3607986 Document Type: Article

Times cited : (19)

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