Fermi level pinning in heavily neutron-irradiated GaN

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Markov, A V ^a   Kolin, N G ^b   Merkurisov, D I ^b   Boiko, V M ^b   Shcherbatchev, K D ^c   Bublik, V T ^c   Voronova, M I ^c   Lee, I H ^d   Lee, C R ^d   Pearton, S J ^e   Dabirian, A ^f   Osinsky, A V ^f  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Federal State Unitary Enterprise   (Russian Federation)

^c NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^d Chonbuk National University   (South Korea)

^e UNIVERSITY OF FLORIDA   (United States)

^f SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); EPITAXIAL GROWTH; FAST REACTORS; FERMI LEVEL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEUTRON IRRADIATION;

CHARGE NEUTRALITY LEVELS; PINNING POSITIONS; SCHOTTKY BARRIERS;

GALLIUM NITRIDE;

EID: 33751078805     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2361157     Document Type: Article

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