Electrical defects introduced during high-temperature irradiation of GaN and AlGaN

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 421-425

  Hayes, M ^a   Auret, F D ^a   Wu, L ^a   Meyer, W E ^a   Nel, J M ^a   Legodi, M J ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

AlGaN; GaN; High temperature; Irradiation

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CARRIER CONCENTRATION; ELECTRON IRRADIATION; ELECTRON TRAPS; ENERGY GAP; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PROTONS; SCHOTTKY BARRIER DIODES; ULTRAVIOLET DETECTORS;

BAND GAP ENERGY; VACANCY CLUSTERS;

GALLIUM NITRIDE;

EID: 0346686009     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.058     Document Type: Conference Paper

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