Intrinsic defects in GaN.I.Ga sublattice defects observed by optical detection of electron paramagnetic resonance

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 4, 2004, Pages

  Chow, K H ^a,c   Vlasenko, L S ^a,d   Johannesen, P ^a,e   Bozdog, C ^a,f   Watkins, G D ^a   Usui, Akira ^b,g   Sunakawa, Haruo ^b,g   Sasaoka, Chiaki ^b   Mizuta, Masashi ^b  

^a LEHIGH UNIVERSITY   (United States)

^b NEC CORPORATION   (Japan)

^c UNIVERSITY OF ALBERTA   (Canada)

^d IOFFE INSTITUTE   (Russian Federation)

^e DANFOSS A S   (Denmark)

^f Nova Measuring Instruments Inc   (United States)

^g FURUKAWA CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRATE;

ACCELERATION; ARTICLE; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; CONFORMATIONAL TRANSITION; ELECTRIC POTENTIAL; ELECTRON; ELECTRON SPIN RESONANCE; ELECTRON TRANSPORT; IRRADIATION; MAGNETIC FIELD; OPTICAL ROTATION; PARAMETER; PHOTOLUMINESCENCE; PHYSICOCHEMICAL MODEL; ROOM TEMPERATURE; STRUCTURE ANALYSIS; TECHNIQUE; TEMPERATURE DEPENDENCE;

EID: 1542516438     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.045207     Document Type: Article

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