10 MeV electrons irradiation effects in variously doped n-GaN

Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

  Polyakov, A Y ^a   Lee, In Hwan ^a   Smirnov, N B ^b   Govorkov, A V ^b   Kozhukhova, E A ^b   Kolin, N G ^c   Korulin, A V ^c   Boiko, V M ^c   Pearton, S J ^d  

^a Chonbuk National University   (South Korea)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c Federal State Unitary Enterprise   (Russian Federation)

^d J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE SPECTROSCOPIES; CARRIER REMOVAL RATE; DONOR CONCENTRATIONS; DOPED SAMPLE; DOPING LEVELS; EPITAXIAL LATERAL OVERGROWTH; HIGH DOSE; IRRADIATION EFFECT; MEV-ELECTRONS; N-TYPE CONDUCTIVITY; SHALLOW DONORS;

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRON TRAPS; ELECTRONS; EPITAXIAL FILMS; EPITAXIAL GROWTH; FERMI LEVEL; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING;

ELECTRON IRRADIATION;

EID: 79960180558     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3596819     Document Type: Article

References (37)

1. S. Nakamura, S. J. Pearton, and G. Fasol, The Blue Laser Diode (Springer, Berlin, 2000).
2. T. Zimmerman, D. Deen, Y. Cao, J. Simon, P. Fay, D. Jena, and H.G. Xing, IEEE Trans. Electron. Devices 29, 661 (2008). 10.1109/LED.2008.923318
3. M. S. Shur and M. A. Khan, in GaN and Related Materials II, edited by, S. J. Pearton, (Gordon and Breach, New York, 1999) pp. 47-92.
4. D. C. Look, D. C. Reynolds, J. W. Hemsky, J. R. Sizelove, R. L. Jones, and R. J. Molnar, Phys. Rev. Lett. 79, 2273 (1997). 10.1103/PhysRevLett.79.2273
5. Z.-Q. Fang, J. W. Hemsky, D. C. Look, and M. P. Mack, Appl. Phys. Lett. 72, 448 (1998). 10.1063/1.120783 (Pubitemid 128672340)
6. L. Polenta, Z.-Q. Fang, and D. C. Look, Appl. Phys. Lett. 76, 2086 (2000). 10.1063/1.126263
7. F. D. Auret, S. A. Goodman, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart, Appl. Phys. Lett. 74, 407 (1999). 10.1063/1.123043
8. S. A. Goodman, F. D. Auret, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart, Mater. Sci. Eng., B B71, 100 (2000). 10.1016/S0921-5107(99)00357- 8 (Pubitemid 30552209)
9. S. A. Goodman, F. D. Auret, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart, Appl. Phys. Lett. 74, 809 (1999). 10.1063/1.123375
10. F. D. Auret, S. A. Goodman, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart, Appl. Phys. Lett. 73, 3745 (1998). 10.1063/1.122881 (Pubitemid 128677520)
11. M. Hayes, F. D. Auret, L. Wu, W. E. Meyer, J. M. Nel, and M. J. Legodi, Physica B 340-342, 421 (2003). 10.1016/j.physb.2003.09.058
12. P. Hacke, T. Detchprohm, K. Hiramatsu, and N. Sawaki, Appl. Phys. Lett. 63, 2676 (1993). 10.1063/1.110417
13. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, C.-R. Lee, and I.-H. Lee, J. Vac. Sci. Technol. B 25, 436 (2007). 10.1116/1.2713406 (Pubitemid 46517204)
14. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, K. D. Shcherbatchev, V. T. Bublik, M. I. Voronova, I.-H. Lee, and C.-R. Lee, J. Appl. Phys. 100, 093715 (2006). 10.1063/1.2361157 (Pubitemid 44772590)
15. M. Linde, S. J. Uftring, and G. D. Watkins, Phys. Rev. B 55, R10177 (1997). 10.1103/PhysRevB.55.R10177
16. I. A. Buyanova, M. Wagner, W. N. Chen, B. Monemar, J. L. Lindstrom, H. Amano, and I. Akasaki, Appl. Phys. Lett. 73, 2968 (1998). 10.1063/1.122646 (Pubitemid 128674202)
17. K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, and G. D. Watkins, Phys. Rev. B 69, 045207 (2004) 10.1103/PhysRevB.69.045207
18. G. Popovici and H. Morkoc, in GaN and Related Materials II, edited by, S. J. Pearton, (Gordon and Breach, the Netherlands, 1999) pp. 93-172.
19. K. Fujito, T. Kiyomi, H. Mochizuki, H. Oota, H. Namita, S. Nagao, and I. Fujimura, Phys. Status Solidi A 205, 1056 (2008). 10.1002/pssa.200778709
20. C. A. Usui, H. Sunakawa, A. Sakai, and A. A. Yamaguchi, Jpn. J. Appl. Phys. 36, L899 (1997). 10.1143/JJAP.36.L899
21. V. V. Emtsev, V. Yu. Davydov, E. E. Haller, A. A. Klochikhin, V. V. Kozlovskii, G. A. Oganesyan, D. S. Poloskin, N. M. Shmidt, V. A. Vekshin, and A. S. Usikov, Physica B 308-310, 58 (2001). 10.1016/S0921-4526(01)00650-0 (Pubitemid 34043475)
22. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. B. Yakimov, P. S. Vergeles, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, I. -H. Lee, C.-R. Lee, and S. J. Pearton, J. Electron. Mater. 36, 1320 (2007). 10.1007/s11664-007-0203-8 (Pubitemid 47512653)
23. I.-H. Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, and S. J. Pearton, Phys. Status Solidi C 3, 2087 (2006). 10.1002/pssc.v3:6
24. I.-H. Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, and S. J. Pearton, Thin Solid Films 516, 2035 (2008). 10.1016/j.tsf.2007.07.144 (Pubitemid 351181435)
25. E. B. Yakimov, P. S. Vergeles, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, I.-H. Lee, C.-R. Lee, and S. J. Pearton, Appl. Phys. Lett. 94, 042118 (2008). 10.1063/1.2840190 (Pubitemid 351198840)
26. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. B. Yakimov, P. S. Vergeles, I.-H. Lee, C.-R. Lee, and S. J. Pearton, J. Vac. Sci. Technol. B 26, 990 (2008). 10.1116/1.2919148 (Pubitemid 351776804)
27. D. L. Losee, J. Appl. Phys. 46, 2204 (1975). 10.1063/1.321865
28. G. M. Martin, A. Mitonneau, D. Pons, A. Mircea, and D. W. Woodard, J. Phys. C 13, 3855 (1980). 10.1088/0022-3719/13/20/009
29. A. Y. Polyakov, N. B. Smirnov, A. S. Usikov, A. V. Govorkov, and B. V. Pushniy, Solid-State Electron. 42, 1959 (1998). 10.1016/S0038-1101(98)00137-3
30. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Z.-Q. Fang, D. C. Look, R. J. Molnar, and A.V. Osinsky, J. Appl. Phys. 91, 6580 (2002). 10.1063/1.1468909 (Pubitemid 34637022)
31. V. Bougrov, M. Levinstein, S. Rumyantsev, and A. Zubrilov, in Properties of Advanced Semiconductor Materials, edited by, M. E. Levinstein, S. L. Rumyantsev, and, M.S. Shur, (John Wiley Sons, Inc., New York, 2001), Chap..
32. J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 50, 8067 (1994). 10.1103/PhysRevB.50.8067
33. M. A. Reschikov and H. Morkoc, J. Appl. Phys. 97, 061301 (2005). 10.1063/1.1868059 (Pubitemid 40833704)
34. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, A. V. Korulin, and S. J. Pearton, J. Vac. Sci. Technol. B 28, 608 (2010). 10.1116/1.3431083
35. K. Saarinen, V. Ranki, T. Suski, M. Bochkowski, and I. Grzegory, J. Cryst. Growth 246, 281 (2002). 10.1016/S0022-0248(02)01752-9 (Pubitemid 35384484)
36. K. Saarinen, T. Suski, I. Grzegory, and D. C. Look, Phys. Rev. B 64, 233201 (2001). 10.1103/PhysRevB.64.233201
37. J. Oila, V. Ranki, J. Kivoja, K. Saarinen, P. Nautojarvi, T. Likonen, J. M. Baranovski, K. Pakula, T. Suski, M. Leszczynsky, and I. Grzegory, Phys. Rev. B 63, 045205 (2001). 10.1103/PhysRevB.63.045205