Formation of uniform ferrocenyl-terminated monolayer covalently bonded to Si using reaction of hydrogen-terminated Si(111) surface with vinylferrocene/n-decane solution by visible-light excitation

Journal of Colloid and Interface Science

Volumn 361, Issue 1, 2011, Pages 259-269

  Sano, Hikaru ^a   Zhao, Mingxiu ^a   Kasahara, Daiji ^a   Murase, Kuniaki ^a   Ichii, Takashi ^a   Sugimura, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

AFM; Cyclic voltammetry; Electrochemically active; Ferrocenyl group; Self assembled monolayer; Vinylferrocene

Indexed keywords

AFM; ATOMIC SCALE; COVALENTLY BONDED; ELECTROCHEMICALLY ACTIVE; FERROCENYL GROUPS; H-SI (111); HYDROGEN-TERMINATED SI(111); N-DECANE; P-TYPE SI; PHOTORESPONSIVITY; PREPARATION METHOD; SI-H BONDS; SUBSTITUTION RATES; SURFACE DENSITY; VINYLFERROCENE; VISIBLE LIGHT; VISIBLE LIGHT EXCITATION; VOLTAMMETRIC;

CYCLIC VOLTAMMETRY; HYDROGEN; HYDROGEN BONDS; ORGANIC POLYMERS; PARAFFINS; SELF ASSEMBLED MONOLAYERS; SILICON; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

DECANE; FERROCENE DERIVATIVE; HYDROGEN; IRON; OXYGEN; SELF ASSEMBLED MONOLAYER; SILICON;

ARTICLE; CONTACT ANGLE; COVALENT BOND; ELECTROCHEMICAL ANALYSIS; NONHUMAN; PARTICLE SIZE; PHOTOCHEMISTRY; PHOTOSENSITIZATION; POLYMERIZATION; PRIORITY JOURNAL; THERMODYNAMICS; ULTRAVIOLET IRRADIATION; WETTABILITY;

EID: 79959780703     PISSN: 00219797     EISSN: 10957103     Source Type: Journal    
DOI: 10.1016/j.jcis.2011.05.071     Document Type: Article

References (66)

1. Ulman A. An Introduction to Ultrathin Organic Films from Langmuir-Blogett to Self-Assembly 1991, Academic Press, San Diego, CA.
2. Ulman A. Chem. Rev. 1996, 96:1533.
3. Love J.C., Estroff L.A., Kriebel J.K., Nuzzo R.G., Whitesides G.M. Chem. Rev. 2005, 105:1103.
4. Sugimura H. Nanocrystalline Materials: Their Synthesis-Structure-Property Relationships and Applications 2006, Elsevier, Amsterdam, (Chapter 3). S.C. Tjong (Ed.).
5. Moses P.R., Murray R.W. J. Am. Chem. Soc. 1976, 98:7435.
6. Osa T., Fujihira M. Nature 1976, 264:349.
7. Sagiv J.J. Am. Chem. Soc. 1980, 102:92.
8. Wasserman S.R., Tao Y.-T., Whitesides G.M. Langmuir 1989, 5:1074.
9. Linford M.R., Chidsey C.E.D. J. Am. Chem. Soc. 1993, 115:12631.
10. Linford M.R., Fenter P., Eisenberger P.M., Chidsey C.E.D. J. Am. Chem. Soc. 1995, 117:3145.
11. Buriak J.M. Chem. Rev. 2002, 102:1271.
12. Wayner D.D.M., Wolkow R.A. J. Chem. Soc., Perkin Trans. 2002, 2:23.
13. Wade C.P., Chidsey C.E.D. Appl. Phys. Lett. 1997, 71:1679.
14. Wade C.P., Chidsey C.E.D. Appl. Phys. Lett. 1998, 72:133.
15. Sieval A.B., Vleeming V., Zuilhof H., Sudhölter E.J.R. Langmuir 1999, 15:8288.
16. Boukherroub R., Morin S., Sharpe P., Wayner D.D.M. Langmuir 2000, 16:7429.
17. Zhang L., Wesley K., Jiang S. Langmuir 2001, 17:6275.
18. P Stewart M., Buriak J.M. J. Am. Chem. Soc. 2001, 123:7821.
19. de Smet L.C.P.M., Stork G.A., Hurenkamp G.H.F., Sun Q.-Y., Topal H., Vronen P.J.E., Sieval A.B., Wright A., Visser G.M., Zuilhof H., Sudhölter E.J.R. J. Am. Chem. Soc. 2003, 125:13916.
20. Sun Q.-Y., de Smet L.C.P.M., van Lagen B., Wright A., Zuilhof H., Sudhölter E.J.R. Angew. Chem., Int. Ed. 2004, 43:1352.
21. Eves B.J., Sun Q.-Y., Lopinski G.P., Zuilhof H. J. Am. Chem. Soc. 2004, 126:14318.
22. Sun Q.-Y., de Smet L.C.P.M., van Lagen B., Giesbers M., Thüne P.C., van Engelenburg J., de Wolf F.A., Zuilhof H., Sudhölter E.J.R. J. Am. Chem. Soc. 2005, 127:2514.
23. Sano H., Maeda H., Matsuoka S., Lee K.-H., Murase K., Sugimura H. Jpn. J. Appl. Phys. 2008, 47:5659.
24. Sano H., Yaku T., Ichii T., Murase K., Sugimura H. J. Vac. Sci. Technol., B 2009, 27:858.
25. Liu Z., Yasseri A.A., Lindsey J.S., Bocian D.F. Science 2003, 302:543.
26. Wei L., Syomin D., Loewe R.S., Lindsey J.S., Zaera F., Bocian D.F. J. Phys. Chem. B 2005, 109:6323.
27. Roth K.M., Yasseri A.A., Liu Z., Dabke R.B., Malinovskii V., Schweikart K.-H., Yu L., Tiznado H., Zaera F., Lindsey J.S., Kuhr W.G., Bocian D.F. J. Am. Chem. Soc. 2003, 125:505.
28. Li Q., Mathur G., Gowda S., Surthi S., Zhao Q., Yu L., Lindsey J.S., Bocian D.F., Misra V. Adv. Mater. 2004, 16:133.
29. Gowda S., Mathur G., Misra V. Appl. Phys. Lett. 2007, 90:142113.
30. Li Q., Surthi S., Mathur G., Gowda S., Misra V., Sorenson T.A., Tenent R.C., Kuhr W.G., Liu Z., Bocian D.F. Appl. Phys. Lett. 2003, 83:198.
31. Roth K.M., Lindsey J.S., Bocian D.F., Kuhr W.G. Langmuir 2002, 18:4030.
32. Kruse P., Johnson E.R., DiLabio G.A., Wolkow R.A. Nano Lett. 2002, 2:807.
33. Li Q., Mathur G., Homsi M., Surthi S., Misra V., Malinovskii V., Schweikart K.-H., Yu L., Lindsey J.S., Liu Z., Dabke R.B., Yasseri A., Bocian D.F., Kuhr W.G. Appl. Phys. Lett. 2002, 81:1494.
34. Zhao Q., Luo Y., Surthi S., Li Q., Mathur G., Gowda S., Larson P.R., Johnson M.B., Misra V. Nanotechnology 2005, 16:257.
35. Dalchiele E.A., Aurora A., Bernardini G., Cattaruzza F., Flamini A., Pallavicini P., Zanoni R., Decker F. J. Electroanal. Chem. 2005, 579:133.
36. Zanoni R., Cattaruzza F., Coluzza C., Dalchiele E.A., Decker F., Di Santo G., Flamini A., Funari L., Marrani A.G. Surf. Sci. 2005, 575:260.
37. Zanoni R., Aurora A., Cattaruzza F., Coluzza C., Dalchiele E.A., Decker F., Di Santo G., Flamini A., Funari L., Marrani A.G. Mater. Sci. Eng., C 2006, 26:840.
38. Decker F., Cattaruzza F., Coluzza C., Flamini A., G Marrani A., Zanoni R., Dalchiele E.A. J. Phys. Chem. B 2006, 110:7374.
39. Cossi M., Iozzi M.F., Marrani A.G., Lavecchia T., Galloni P., Zanoni R., Decker F. J. Phys. Chem. B 2008, 110:22961.
40. Tajimi N., Sano H., Murase K., Lee K.-H., Sugimura H. Langmuir 2007, 23:3193.
41. Zanoni R., Cossi M., Iozzi M., Cattaruzza F., Dalchiele E., Decker F., Marrani A., Valori M. Superlattice Microstruct. 2008, 44:542.
42. Boccia A., Marrani A., Stranges S., Zanoni R., Alagia M., Cossi M., Iozzi M. J. Chem. Phys. 2008, 128:154315.
43. Marrani A., Dalchiele E., Zanoni R., Decker F., Cattaruzza F., Bonifazi D., Prato M. Electrochim. Acta 2008, 53:3903.
44. Boccia A., Decker F., Marrani A., Stranges S., Zanoni R., Cossi M., Iozzi M. Superlattices Microstruct. 2009, 46:30.
45. Huang K., Duclairoir F., Pro T., Buckley J., Marchand G., Martinez E., Marchon J., De Salvo B., Delapierre G., Vinet F. ChemPhysChem 2009, 10:963.
46. Marrani A., Cattaruzza F., Decker F., Galloni P., Zanoni R. Superlattices Microstruct. 2009, 46:40.
47. Ciampi S., Eggers P., Le Saux G., James M., Harper J., Gooding J. Langmuir 2009, 25:2530.
48. Fabre B. Acc. Chem. Res. 2010, 43:656.
49. Fabre B., Hauquier F. J. Phys. Chem. B 2006, 110:6848.
50. Kim Y.J., Han J., Sano H., Lee K.-H., Noda K., Ichii T., Murase K., Matsushige K., Sugimura H. Appl. Surf. Sci. 2009, 256:1507.
51. Sugimura H., Hozumi A., Kameyama T., Takai O. Surf. Interface Anal. 2002, 34:550.
52. Kurokawa S., Takei T., Sakai A. Jpn. J. Appl. Phys. 2003, 42:4655.
53. Palik E.D. Handbook of Optical Constants of Solids 1998, Academic Press, San Diego, CA, p. 547.
54. Ambundo E.A., Deydier M.-V., Grall A.J., Aguera-Vega N., Dressel L.T., Cooper T.H., Heeg M.J., Ochrymowycz L.A., Rorabacher D.B. Inorg. Chem. 1999, 38:4233.
55. Sato Y., Maeda M. Jpn. J. Appl. Phys. 1994, 33:6508.
56. Woodbridge C.M., Pugmire D.L., Johnson R.C., Boag N.M., Langell M.A. J. Phys. Chem. B 2000, 104:3085.
57. Fukidome H., Matsumura M. Appl. Surf. Sci. 1998, 130-132:146.
58. Bard A.J., Faulkner L.R. Electrochemical Methods: Fundamental and Applications 2001, John Wiley and Sons, New York, p. 590. second ed.
59. Chidsey C.E.D., Bertozzi C.R., Putvinski T.M., Mujsce A.M. J. Am. Chem. Soc. 1990, 112:4301.
60. Liu Z., Yasseri A.A., Lindsey J.S., Bocian D.F. Science 2003, 28:1543.
61. Sondag-Huethorst J.A.M., Fokkink L.G.J. Langmuir 1994, 10:4380.
62. Sze S.M. Semiconductor Device - Physics and Technology 1981, Wiley, New York. second ed.
63. Pommerehne J., Vestweber H., Guss W., Mahrt R.F., Bassler H., Porsch M., Daub J. Adv. Mater. 1995, 7:551.
64. Zhang G., Zhang H., Sun M., Liu Y., Pang X., Yu X., Liu B., Li Z. J. Comput. Chem. 2007, 28:2260.
65. Grigorov M.G., Waber J., Vulliermet N., Chermette H., Tronchet J.M.J. J. Chem. Phys. 1998, 108:8790.
66. Seki K. Mol. Cryst. Liq. Cryst. 1989, 171:255.