A search for subsurface dopants on hydrogen-terminated Si(111) surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 B, 2003, Pages 4655-4658

  Kurokawa, Shu ^a   Takei, Tomohiro ^a   Sakai, Akira ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Barrier height; Dopant passivation; Hydrogen terminated Si(111) 1 1; Scanning tunneling microscopy (STM)

Indexed keywords

ATOMS; ELECTRIC CHARGE; ENERGY GAP; ETCHING; HYDROGEN; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SILICON WAFERS; SURFACE STRUCTURE; THERMAL EFFECTS;

BARRIER HEIGHT IMAGING; DOPANT ATOMS; DOPANT PASSIVATION; HYDROGEN TERMINATED SILICON; WET ETCHING;

SEMICONDUCTOR DOPING;

EID: 0141792559     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4655     Document Type: Article

References (20)

1. P. M. Voyles, D. A. Muller, J. L. Grazul, P. H. Citrin and H.-J. Gossmann: Nature 416 (2002) 826.
2. C. Domke, Ph. Ebert and K. Urban: Surf. Sci. 415 (1998) 285.
3. M. B. Johnson, O. Albrektsen, R. M. Feenstra and H. W. M. Salemink: Appl. Phys. Lett. 63 (1993) 2923.
4. J. F. Zheng, X. Liu, N. Newman, E. R. Webwer, D. F. Ogletree and M. Salmeron: Phys. Rev. Lett. 72 (1994) 1490.
5. S. Kurokawa, M. Yuasa, A. Sakai and Y. Hasegawa: Jpn. J. Appl. Phys. 36 (1997) 3860.
6. S. Kurokawa: unpublished.
7. G. S. Higashi, R. S. Becker, Y. J. Chabal and A. J. Becker: Appl. Phys. Lett. 58 (1991) 1656.
8. H. Angermann, W. Henrion, A. Röseler and M. Rebien: Mater. Sci. Eng. B73 (2000) 178.
9. H. Angerman, W. Henrion, M. Rebien, J.-T. Zettler and A. Roseler: Surf. Sci. 388 (1997) 15.
10. R. S. Becker, G. S. Higashi, Y. J. Chabal and A. J. Becker: Phys. Rev. Lett. 65 (1990) 1917.
11. J. A. Appelbaum and D. R. Hamann: Phys. Rev. Lett. 34 (1975) 806.
12. K. Kaiji, S.-L. Yau and K. Itaya: J. Appl. Phys. 78 (1995) 5727.
13. C. Wade and C. Chidsey: Appl. Phys. Lett. 71 (1997) 1679.
14. T. A. Newton, Y.-C. Huang, L. A. Lepak and M. A. Hines: J. Chem. Phys. 111 (1999) 9125.
15. S. Kurokawa, J. Yoshikawa and A. Sakai: Jpn. J. Appl. Phys. 39 (2000) 3736.
16. L. Ley, J. Ristein, J. Schäfer and S. Miyazaki: J. Vac. Sci. Technol. B14 (1996) 3008.
17. J. A. Strocio, R. M. Feenstra and A. P. Fein: Phys. Rev. Lett. 58 (1987) 1668.
18. R. B. Dingle: Philos. Mag. 46 (1955) 831.
19. Ph. Ebert, X. Chen, M. Heinrich, M. Simon, K. Urban and M. G. Lagally: Phys. Rev. Lett. 76 (1996) 2089.
20. M. Nishizawa, H. Ito, L. Bolotov and T. Kanayama: Abstr. (Autumn Meet. 2002) The Physical Society of Japan, 6pPSB-12.