Erratum: Etch-pit initiation by dissolved oxygen on terraces of H–Si(111) (Appl. Phys. Lett. (1997) 71 (1679) (10.1063/1.120249))

Applied Physics Letters

Volumn 72, Issue 1, 1998, Pages 133-

  Wade, Christopher P ^a   Chidsey, Christopher E D ^a  

^a STANFORD UNIVERSITY   (United States)

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[No Author keywords available]

Indexed keywords

EID: 0011371701     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120665     Document Type: Erratum

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