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Volumn 14, Issue 7, 2011, Pages

Comparison of nonvolatile memory effects in Ni-based layered and dotted nanostructures prepared through atomic layer deposition

(10) Lee, Jun Young a Kim, Jeong Eun a Hwang, Jin Ha a Ahn, Jae Pyoung b Lee, Byung Kook c Kim, Seok Hwan c Chung, Taek Mo c Lee, Sun Sook c Kim, Chang Gyoun c An, Ki Seok c

a Hong Ik University (South Korea)

b Korea Institute of Science and Technology (South Korea)

c Korea Research Institute of Chemical Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; CHARGE TRAP; CONTINUOUS DEPOSITION; FACILE FABRICATION; MEMORY WINDOW; NANO SCALE; NANOFLOATING GATE MEMORY; NICKEL NANOCRYSTALS; NIO THIN FILM; NON-VOLATILE MEMORIES; RETENTION BEHAVIOR;

ATOMIC LAYER DEPOSITION; FILM PREPARATION; NANOCRYSTALS; SEMICONDUCTING FILMS; THIN FILMS; VAPOR DEPOSITION;

DEPOSITION;

EID: 79959555060 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3583534 Document Type: Article

Times cited : (6)

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