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Volumn 13, Issue 6, 2010, Pages

Nonvolatile memory effects of NiO layers embedded in Al2 O 3 high- k dielectrics using atomic layer deposition

(9) Cho, Wontae a Lee, Sun Sook a Chung, Taek Mo a Kim, Chang Gyoun a An, Ki Seok a Ahn, Jae Pyoung b Lee, Jun Young c Lee, Jong Won c Hwang, Jin Ha c

a Korea Research Institute of Chemical Technology (South Korea)

b Korea Institute of Science and Technology (South Korea)

c Hong Ik University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION IMAGE; HIGH-FREQUENCY CAPACITANCE-VOLTAGE MEASUREMENTS; HIGH-K DIELECTRIC; MEMORY STRUCTURE; MEMORY WINDOW; NANO-LAMINATES; NON-VOLATILE MEMORIES; SI WAFER; THIN-FILM DEPOSITIONS;

DIELECTRIC MATERIALS; NICKEL OXIDE; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

ALUMINUM;

EID: 77951198084 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3380827 Document Type: Article

Times cited : (12)

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