Memory characteristics of MOS capacitors with Ge nanocrystal-embedded Al2O3 gate layers

Solid State Communications

Volumn 143, Issue 11-12, 2007, Pages 550-552

  Park, Byoungjun ^a   Choi, Samjong ^a,b   Lee, Hye Ryoung ^a   Cho, Kyoungah ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

A. Nanostructures; A. Semiconductors

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); HYSTERESIS LOOPS; NANOCRYSTALS; THERMAL EFFECTS;

COUNTERCLOCKWISE HYSTERESIS LOOPS; EMBEDDED MOS CAPACITORS; FOWLER-NORDHEIM TUNNELING;

MOS CAPACITORS;

EID: 34548010241     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.06.034     Document Type: Article

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