Analysis of electron mobility in inversion-mode Al2O 3InxGa1-xAs MOSFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 7, 2011, Pages 1972-1978

  Wang, Weike ^a,b   Hwang, James C M ^a   Xuan, Yi ^c   Ye, Peide D ^c  

^a Lehigh University   (United States)

^b IBM RESEARCH   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

Charge carrier mobility; gallium compounds; indium compounds; metaloxidesemiconductor field effect transistors (MOSFETs); semiconductor device modeling

Indexed keywords

AS INTERFACES; BULK MOBILITY; CHARGE-CARRIER MOBILITY; CORRELATION LENGTHS; GATE OXIDE; INTERFACE ROUGHNESS; MEASURED DATA; MOSFETS; OXIDE CHARGE; SEMICONDUCTOR DEVICE MODELING; STRONG INVERSION; TRANSFER CHARACTERISTICS;

ELECTRON MOBILITY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MODELS; TRANSISTORS;

MOSFET DEVICES;

EID: 79959511921     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2146255     Document Type: Article

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