EBSD analysis of polysilicon films formed by aluminium induced crystallization of amorphous silicon

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6882-6887

  Tuzun O ^a   Auger, J M ^a,b   Gordon, I ^c   Focsa, A ^a   Montgomery, P C ^a   Maurice, C ^b   Slaoui, A ^a   Beaucarne, G ^c   Poortmans, J ^c  

^a Faculté de Médecine   (France)

^b LCG   (France)

^c IMEC   (Belgium)

Author keywords

Alumina; Aluminium induced crystallization; Electron backscattering diffraction; Interference microscopy analysis; Polycrystalline silicon

Indexed keywords

ALUMINUM; ALUMINUM CLADDING; AMORPHOUS FILMS; AMORPHOUS MATERIALS; COMPUTER NETWORKS; CRYSTALLIZATION; EUROPIUM; LIGHT METALS; NANOCRYSTALLINE ALLOYS; NONMETALS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON; THICK FILMS; THIN FILMS;

(100) SILICON; (E ,3E) PROCESS; ALUMINIUM-INDUCED CRYSTALLIZATION; ELECTRON BACK-SCATTERED DIFFRACTION (EBSD) ANALYSIS; EUTECTIC TEMPERATURES; GRAIN SIZES; POLY SILICON FILMS; POLY-SI; POLYCRYSTALLINE SILICON (P-SI); PROMISING APPROACH; SI LAYER;

AMORPHOUS SILICON;

EID: 45849150800     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.105     Document Type: Article

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