Switching kinetics of interface states in deep submicrometre SOI n-MOSFETs

Semiconductor Science and Technology

Volumn 16, Issue 1, 2001, Pages 21-25

  Shi, Y ^a   Bu, H M ^a   Yuan, X L ^a   Gu, S L ^a   Shen, B ^a   Han, P ^a   Zhang, R ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON BEAM LITHOGRAPHY; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; INTERFACES (MATERIALS); QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TELEGRAPH INTERFERENCE; THERMAL EFFECTS; THERMOANALYSIS; THERMOOXIDATION;

COULOMB ATTRACTIVE CENTRE; COULUMB REPULSIVE CENTRE; DEEP SUBMICROMETRE SILICON ON INSULATOR TECHNOLOGY MOSFETS; RANDOM TELEGRAPH SIGNAL; SWITCHING KINETICS; THERMALLY ACTIVATED PROCESS;

MOSFET DEVICES;

EID: 0035124567     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/1/304     Document Type: Article

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