A theoretical study of negative bias temperature instability in p-type NEMFET

Biennial University/Government/Industry Microelectronics Symposium - Proceedings

Volumn , Issue , 2010, Pages

  Jain, Ankit ^a   Islam, Ahmad Ehteshamul ^a   Alam, Muhammad Ashraful ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

CV curve; Hydrogen relaxation; NBTI; NEMFET; Pul in voltage; Pull out voltage; Threshold voltage

Indexed keywords

C-V CURVE; NBTI; NEMFET; PUL-IN VOLTAGE; PULL-OUT;

FIELD EFFECT TRANSISTORS; HYDROGEN; NEGATIVE TEMPERATURE COEFFICIENT; QUALITY ASSURANCE; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

BIAS VOLTAGE;

EID: 77955755032     PISSN: 07496877     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/UGIM.2010.5508940     Document Type: Conference Paper

References (5)

1. H. Kam, et al., "A New Nano-Electro-Mechanical Field Effect Transistor (NEMFET) Design for Low-Power Electronics," in IEDM, 2005, pp. 463-466.
2. H. Kam and T. Liu, "Pull-In and Release Voltage Design for Nanoelectromechanical Field-Effect Transistors," IEEE TRANSACTIONS ON ELECTRON DEVICES, pp. 3072-3082, DEC 2009 2009.
3. M. Alam, et al., "A comprehensive model for PMOS NBTI degradation: Recent progress," MICROELECTRONICS RELIABILITY, vol. 47, pp. 853-862, JUN 2007 2007.
4. A. Islam, et al., "Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation," IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 54, pp. 2143-2154, SEP 2007 2007.
5. S. Melle, et al., "Investigation Of Stiction Effect In Electrostatic Actuated RF MEMS Devices," in Topical Meeting On Silicon Monolithic Integrated Circuits In RF Systems, 2007.