'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2010, Pages 76-79

  Bukhori, Muhammad Faiz ^a   Grasser, Tibor ^b   Kaczer, Ben ^c   Hans, Reisinger ^d   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c IMEC ^*  (Belgium)

^d Infineon   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT STATES;

ATOMISTIC SIMULATIONS; CHARGED DEFECTS; CURRENT PERCOLATION; DEFECT STATE; GATE VOLTAGES; INTRINSIC VARIABILITIES; PERCOLATION PATH; RANDOM DOPANTS; STEP-HEIGHT; VOLTAGE DEPENDENCE;

SOLVENTS;

EID: 79952425634     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IIRW.2010.5706490     Document Type: Conference Paper

References (16)

1. K. J. Kuhn, "Reducing variation in advanced logic technologies: Approaches to process and design for manufacturability of nanoscale CMOS". IEDM Technical Digest, 2007: p. 471-474.
2. A. Asenov, A. R. Brown, J. H. Davies, S. Kaya and G.. Slavcheva, "Simulation of intrinsic parameter fluctuations in decananometer and nanometer scale MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 9, pp. 1837-1852, Sept. 2003.
3. K. Bernstein, D. J. Frank, A. E. Gattiker, W. Haensch, B. L. Ji, S. R. Nassif, E. J. Nowak, D. J. Pearson, and N. J. Rohrer, "High-performance CMOS variability in the 65-nm regime and beyond," IBM J. Res. Develop. Vol. 50, no. 4/5, pp. 433-449, July/Sept. 2006.
4. S. E. Rauch III, "Review and reexamination of reliability effects related to NBTI-induced statistical variations," IEEE Trans. Device Mater. Reliab. vol. 7, no. 4, pp. 388-395, Dec. 2007.
5. C. M. Compagnoni, R. Gusmeroli, A. S. Spinelli, A. L. Lacaita, M. Bonanomi, and A. Visconti, "Statistical model for Random Telegraph Noise in flash memories," IEEE Trans. Electron Devices," vol. 55, no. 1, pp. 388-395, Jan. 2008.
6. T. Fischer, E. Amirante, K. Hofmann, M. Ostermayr, P. Huber, and D. Schmitt-Landsiedel, "A 65 nm test structure for the analysis of NBTI induced statistical variation in SRAM transistors," Proc. ESSDERC, Edinburgh, UK, 2008, pp. 51-54.
7. M. J. Kirton and M. J. Uren, "Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise," Adv. Phys., vol. 38, pp. 367-468, 1989.
8. A. Asenov, R. Balasubramaniam, A. R. Brown, and J. H. Davies, "RTS amplitudes in decananometer MOSFETs: 3-D simulation study," IEEE Trans. Electron Devices, vol. 50, no. 3, pp. 839-845, 2003.
9. T. Grasser, et al, "The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability," IRPS 2010, pp. 16-25.
10. A. Kimmel et. Al., ECS Trans., 19 (2), pp. 3-17, 2009.
11. G. Roy, A. R. Brown, F. Adamu-Lema, S. Roy, and A. Asenov, "Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 3063-3070, 2006.
12. A. Asenov, G. Slavcheva, A. R. Brown, J. H. Davies, and S. Saini, "Quantum enhancement of the random dopant induced threshold voltage fluctuations in sub 100 nm MOSFETs: A 3-D density-gradient simulation study," IEEE Trans. Electron Devices, vol. 48, pp. 722-729, 2001.
13. A. Asenov, A. R. Brown, and J. R. Watling, "Quantum corrections in the simulations of decanano MOSFETS," Solid State Electron, vol. 47, pp. 141-145, 2003.
14. J. Chang, A. A. Abidi, and C. R. Viswanathan, "Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 1965-1971, Nov. 1994
15. C. L. Alexander, A. R. Brown, J. R. Watling, and A. Asenov "Impact of single charge trapping in nano-MOSFETs: Electrostatics versus transport effects," IEEE Trans. Nanotechnology, vol. 4, no. 3, pp. 339-344, May. 2005.
16. B. Kaczer et. al., "Origin of NBTI variability in deeply scaled pFETs," IRPS 2010. pp. 26-32.