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Volumn , Issue , 2010, Pages 12-16

The impact of recovery on BTI reliability assessments

Author keywords

[No Author keywords available]

Indexed keywords

AC STRESS; COMBINATIONAL LOGIC; DEGRADATION MECHANISM; DEVICE DEGRADATION; LIFETIME PREDICTION; MEASUREMENT TIME; RELIABILITY ASSESSMENTS;

EID: 79952428166     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IIRW.2010.5706474     Document Type: Conference Paper
Times cited : (14)

References (15)
  • 1
    • 85190299133 scopus 로고    scopus 로고
    • NBTI: Confusion, frustration, and promise?
    • tutorial topic #122
    • J. Campbell, "NBTI: Confusion, Frustration, and Promise?", Proc. Intl. Rel. Phys. Symp. (IRPS) 2010, tutorial topic #122
    • (2010) Proc. Intl. Rel. Phys. Symp. (IRPS)
    • Campbell, J.1
  • 2
    • 85190286124 scopus 로고    scopus 로고
    • JEDEC, new wafer-level BTI standard, proposal JC-14.2
    • JEDEC, new wafer-level BTI standard, proposal JC-14.2
  • 3
    • 0842266651 scopus 로고    scopus 로고
    • A critical examination of the mechanics of dynamic NBTI for PMOSFETs
    • M. A. Alam, "A Critical Examination of the Mechanics of Dynamic NBTI for PMOSFETs", IEDM technical digest 2003, pp. 345-348
    • (2003) IEDM Technical Digest , pp. 345-348
    • Alam, M.A.1
  • 6
    • 34547148329 scopus 로고    scopus 로고
    • A Comparison of very fast to very slow components in degradation and recovery due to NBTI and bulk hole trapping to existing physical models
    • H. Reisinger, O. Blank, W. Heinrigs, W. Gustin and Ch. Schluender, "A Comparison of very fast to very slow components in degradation and recovery due to NBTI and bulk hole trapping to existing physical models", IEEE Trans. Dev. Mat. Rel., vol. 7, no.1, pp.119-129 (2007)
    • (2007) IEEE Trans. Dev. Mat. Rel. , vol.7 , Issue.1 , pp. 119-129
    • Reisinger, H.1    Blank, O.2    Heinrigs, W.3    Gustin, W.4    Schluender, Ch.5
  • 10
    • 77957895256 scopus 로고    scopus 로고
    • Two independent components modeling for Negative Bias Temperature Instability
    • V. Huard, "Two independent components modeling for Negative Bias Temperature Instability", Proc. Intl. Rel. Phys.Symp. (IRPS) 2010, pp. 33-42
    • (2010) Proc. Intl. Rel. Phys.Symp. (IRPS) , pp. 33-42
    • Huard, V.1
  • 11
  • 12
    • 46649084003 scopus 로고    scopus 로고
    • The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of pMOSFETs: A study by ultrafast on-the-fly IDLIN technique
    • V. Maheta; C. Olsen, K. Ahmed, and S. Mahapatra, "The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of pMOSFETs: A Study by Ultrafast On-The-Fly IDLIN Technique", IEEE TED, vol.55, no. 7, p. 1630
    • IEEE TED , vol.55 , Issue.7 , pp. 1630
    • Maheta, V.1    Olsen, C.2    Ahmed, K.3    Mahapatra, S.4
  • 13
    • 34548740258 scopus 로고    scopus 로고
    • On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?
    • S. Mahapatra, K. Ahmed, D. Varghese, A. E. Islam, G. Gupta, L. Madhav, D. Saha and M. A. Alam, "On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?", Proc.Intl.Rel.Phys.Symp. (IRPS) 2007, pp. 1-9
    • (2007) Proc.Intl.Rel.Phys.Symp. (IRPS) , pp. 1-9
    • Mahapatra, S.1    Ahmed, K.2    Varghese, D.3    Islam, A.E.4    Gupta, G.5    Madhav, L.6    Saha, D.7    Alam, M.A.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.