Effects of the annealing temperature on the electrical properties of p-type ZnO films grown on (0001) sapphire substrates by using atomic layer epitaxy

Journal of the Korean Physical Society

Volumn 49, Issue 3, 2006, Pages 913-917

  Lee, Chongmu ^a   Lim, Jongmin ^a  

^a Inha University   (South Korea)

Author keywords

Annealing; Atomic layer epitaxy; Nitrogen doped ZnO; p type; ZnO

Indexed keywords

EID: 33749859864     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (23)

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