Influence of nitrogen annealing on structural and photoluminescent properties of ZnO thin film grown on c-Al2O3 by atmospheric pressure MOCVD

Materials Science in Semiconductor Processing

Volumn 8, Issue 4, 2005, Pages 491-496

  Chen, Yufeng ^a   Pu, Yong ^a   Wang, Li ^a   Mo, Chunlan ^a   Fang, Wenqing ^a   Xiong, Bingchuan ^a   Jiang, Fengyi ^a  

^a NANCHANG UNIVERSITY   (China)

Author keywords

Deep level emission; MOCVD; Nitrogen annealing; Thin film; UV emission; ZnO

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CRYSTAL LATTICES; CRYSTAL ORIENTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOLUMINESCENCE; ULTRAVIOLET RADIATION; X RAY DIFFRACTION; ZINC OXIDE;

DEEP-LEVEL EMISSION; NITROGEN ANNEALING; NONLINEAR RESISTANCE; UV-EMISSION;

THIN FILMS;

EID: 18144381986     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.07.006     Document Type: Article

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