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Japanese Journal of Applied Physics

Volumn 49, Issue 8 PART 1, 2010, Pages

Zinc oxide-based schottky diode prepared using radio-frequency magnetron cosputtering system

(5) Lai, Bo Ting a Lee, Ching Ting b Hong, Jhen Dong a Yao, Shiau Lu a Liu, Day Shan a

a NATIONAL FORMOSA UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AL ELECTRODE; C-AXIS ORIENTATIONS; CO-SPUTTERED FILMS; CONTACT BEHAVIOR; IDEALITY FACTORS; INDIUM TIN OXIDE; MAGNETRON CO-SPUTTERING; OXYGEN PLASMA TREATMENTS; POST ANNEALING TREATMENT; RADIO FREQUENCIES; RADIO-FREQUENCY (RF) MAGNETRON; RECTIFYING PROPERTIES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; ZNO; ZNO CRYSTALS; ZNO LAYERS; ZNO SURFACE;

DIODES; DISTILLATION; ELECTRIC CONTACTORS; INDIUM; INDIUM COMPOUNDS; MAGNETRONS; OHMIC CONTACTS; OPTIMIZATION; OXYGEN; OXYGEN VACANCIES; PLASMA APPLICATIONS; SCHOTTKY BARRIER DIODES; TIN; TIN OXIDES; TITANIUM COMPOUNDS; ZINC;

ZINC OXIDE;

EID: 77957878473 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.085501 Document Type: Article

Times cited : (13)

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