메뉴 건너뛰기




Volumn 100, Issue 1-2, 2004, Pages 270-276

Fabrication and characterisation of NiO/ZnO structures

Author keywords

Electrical properties; Nickel oxide; Rectifying junction; Zinc oxide

Indexed keywords

COMPOSITION; ELECTRON BEAMS; MOS DEVICES; NICKEL COMPOUNDS; OPTICAL PROPERTIES; OXIDATION; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 2342539699     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2003.12.054     Document Type: Article
Times cited : (59)

References (18)
  • 1
    • 0016564149 scopus 로고
    • The luminescence of ZnO under high one- and two-quantum excitation
    • Kligshirn C. The luminescence of ZnO under high one- and two-quantum excitation. Phys. Status Solidi B. 71:1975;547.
    • (1975) Phys. Status Solidi B , vol.71 , pp. 547
    • Kligshirn, C.1
  • 3
    • 0001026156 scopus 로고    scopus 로고
    • ZnO diode fabricated by excimer-laser doping
    • Aoki T., Hatanaka Y., Look D.C. ZnO diode fabricated by excimer-laser doping. Appl. Phys. Lett. 76:2000;3257.
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 3257
    • Aoki, T.1    Hatanaka, Y.2    Look, D.C.3
  • 6
    • 0030233648 scopus 로고    scopus 로고
    • Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic
    • Lee W.-I., Young R.-L., Chen W.-K. Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic. Jpn. J. Appl. Phys. 35:1996;L1158.
    • (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 1158
    • Lee, W.-I.1    Young, R.-L.2    Chen, W.-K.3
  • 7
    • 0033874052 scopus 로고    scopus 로고
    • ZnO grain boundaries: Electrical activity and diffusion
    • Tuller H.L. ZnO grain boundaries: electrical activity and diffusion. J. Electroceram. 4:1999;33.
    • (1999) J. Electroceram. , vol.4 , pp. 33
    • Tuller, H.L.1
  • 8
    • 0000025515 scopus 로고
    • Metal-Semiconductor surface barriers
    • Mead C.A. Metal-Semiconductor surface barriers. Solid-State Electron. 9:1965;1023.
    • (1965) Solid-state Electron. , vol.9 , pp. 1023
    • Mead, C.A.1
  • 13
    • 33748686987 scopus 로고    scopus 로고
    • Effect of heat treatment on the oxygen content and resistivity in sputtered NiO films
    • Kohmoto O., Nakagawa H., Isagawa Y., Chayahara A. Effect of heat treatment on the oxygen content and resistivity in sputtered NiO films. J. Magn. Magn. Mater. 226-230:2001;1629.
    • (2001) J. Magn. Magn. Mater. , vol.226-230 , pp. 1629
    • Kohmoto, O.1    Nakagawa, H.2    Isagawa, Y.3    Chayahara, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.