High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 265, Issue 1-2, 2004, Pages 34-40

  Miyamoto, Kazuhiro ^a   Sano, Michihiro ^a   Kato, Hiroyuki ^a   Yao, Takafumi ^b  

^a STANLEY ELECTRIC CO LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Dislocation density; A1. Electrical properties of ZnO; B1. LT ZnO; B1. ZnO; B1. ZnO MgO double buffer

Indexed keywords

BINDING ENERGY; DOPING (ADDITIVES); ELECTRODES; ELECTRON MOBILITY; HALL EFFECT; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PLASMA GUNS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

DISLOCATION DENSITY; ELECTRICAL PROPERTIES OF ZNO; LT-ZNO; ZNO; ZNO/MGO DOUBLE-BUFFER;

PLASMAS;

EID: 1842611826     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.01.035     Document Type: Article

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