Electrical properties and deep traps in ZnO films grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 1794-1798

  Polyakov, A Y ^a   Smirnov, N B ^a   Belogorokhov, A I ^a   Govorkov, A V ^a   Kozhukhova, E A ^a   Osinsky, A V ^b   Xie, J Q ^b   Hertog, B ^b   Pearton, S J ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b SVT ASSOCIATES   (United States)

^c University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP TRAPS; ELECTRON CONCENTRATIONS; INFRARED REFLECTANCE MEASUREMENTS; PHOTOCAPACITANCE;

CAPACITANCE; ELECTRON TRAPS; HALL EFFECT; MOLECULAR BEAM EPITAXY; SAPPHIRE; ZINC OXIDE;

THIN FILMS;

EID: 37149026290     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2790918     Document Type: Article

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