|
|
Volumn 42, Issue 10, 2009, Pages
|
|
Structural characterization of two-step growth of epitaxial ZnO films on sapphire substrates at low temperatures
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
DEFECT CONCENTRATIONS;
DEVICE STRUCTURES;
FILM SURFACES;
GROWING FILMS;
GROWTH CHARACTERISTIC;
HIGH QUALITY;
HIGH RESOLUTION X RAY DIFFRACTION;
HIGH-RESOLUTION TEM;
HIGH-TEMPERATURE GROWTH;
LATTICE PARAMETERS;
LOW TEMPERATURES;
MODERATE TEMPERATURE;
NUCLEATION LAYERS;
POISSON'S RATIO;
SAPPHIRE SUBSTRATES;
STRUCTURAL CHARACTERIZATION;
TEMPLATE LAYERS;
TWO-STEP GROWTH;
ZNO FILMS;
ZNO LAYERS;
COMMUNICATION CHANNELS (INFORMATION THEORY);
CORUNDUM;
CRYSTAL GROWTH;
DEFECTS;
DIFFRACTION;
EPITAXIAL FILMS;
FILM GROWTH;
GROWTH TEMPERATURE;
LATTICE CONSTANTS;
METALLIC FILMS;
SAPPHIRE;
SEMICONDUCTING ZINC COMPOUNDS;
SULFUR COMPOUNDS;
SURFACE ROUGHNESS;
TWO DIMENSIONAL;
X RAY DIFFRACTION;
ZINC OXIDE;
EPITAXIAL GROWTH;
|
|
EID: 70149097749
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/42/10/105409 Document Type: Article |
|
Times cited : (24)
|
|
References (19)
|
