Electrical and optical properties of ZnO films grown by molecular beam epitaxy

Applied Surface Science

Volumn 255, Issue 9, 2009, Pages 4913-4915

  Wang, S P ^a,b   Shan, C X ^a   Yao, B ^a   Li, B H ^a   Zhang, J Y ^a   Zhao, D X ^a   Shen, D Z ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Grain boundary; Hall mobility; Molecular beam epitaxy; Zinc oxide

Indexed keywords

GRAIN BOUNDARIES; GRAIN GROWTH; GROWTH TEMPERATURE; HALL MOBILITY; II-VI SEMICONDUCTORS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; OXIDE FILMS; SAPPHIRE; ZINC OXIDE;

ELECTRICAL AND OPTICAL PROPERTIES; GRAIN SIZE; INTENSITY RATIO; NEAR BAND EDGE EMISSIONS; OPTICAL AND ELECTRICAL PROPERTIES; ZINC OXIDE (ZNO); ZNO FILMS;

OPTICAL FILMS;

EID: 60249090899     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.12.035     Document Type: Article

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