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Journal of Crystal Growth

Volumn 312, Issue 20, 2010, Pages 2861-2864

A route to single-crystalline ZnO films with low residual electron concentration

(6) Liu, J S a,b Shan, C X a Wang, S P a,b Sun, F a,b Yao, B a Shen, D Z a

a CHANGCHUN INSTITUTE OF OPTICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

A-PLANE SAPPHIRE; A3. MOLECULAR BEAM EPITAXY; B1. ZINC COMPOUNDS; BEST VALUE; ELECTRON CONCENTRATION; FREE-EXCITON EMISSIONS; HIGH QUALITY; HIGH TEMPERATURE; LOW TEMPERATURE PHOTOLUMINESCENCE; PHONON REPLICA; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SEMICONDUCTING II-VI MATERIALS; SINGLE-CRYSTALLINE; SMOOTH SURFACE; X-RAY DIFFRACTION DATA; ZNO BUFFER LAYER; ZNO FILMS;

CRYSTALLINE MATERIALS; DIFFRACTION; EPITAXIAL GROWTH; METALLIC FILMS; MOLECULAR BEAM EPITAXY; TRANSITION METAL COMPOUNDS; X RAY DIFFRACTION; X RAYS; ZINC; ZINC OXIDE;

MOLECULAR BEAMS;

EID: 77956413299 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.07.006 Document Type: Article

Times cited : (10)

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