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Volumn 104, Issue 7, 2008, Pages

Interface structure and anisotropic strain relaxation of nonpolar wurtzite (11 2- 0) and (10 1- 0) orientations: ZnO epilayers grown on sapphire

(6) Chauveau, J M a,b Venngus P a Laugt M a Deparis, C a Zuniga Perez, J a Morhain, C a

a CNRS (France)

b UNIVERSITÉ CÔTE D'AZUR (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABS RESINS; ANISOTROPY; CORUNDUM; CRYSTAL GROWTH; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; LATTICE MISMATCH; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NITRIDES; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; STRAIN CONTROL; STRAIN RELAXATION; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

ANISOTROPIC; ANISOTROPIC STRAIN RELAXATIONS; APPLIED STRESSES; CRYSTALLOGRAPHIC DIRECTIONS; DOMAIN MATCHING EPITAXIES; EPILAYERS GROWN; EPITAXIAL RELATIONSHIPS; FLAT INTERFACES; GLIDE OF DISLOCATIONS; GROWTH DIRECTIONS; INTERFACE PROPERTIES; INTERFACE STRUCTURES; LATTICE MATCHING EPITAXIES; LATTICE MISMATCHED; LOW ENERGIES; MISFIT DISLOCATIONS; NONPOLAR; PLANE DIRECTIONS; PLANE STRESSES; PLASTIC RELAXATIONS; POLAR ORIENTATIONS; PRISMATIC SLIPT; RESIDUAL STRAINS; SLIP SYSTEMS; STRONG ANISOTROPIES; WURTZITE; WURTZITE STRUCTURES; YIELDING;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 54049112245 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2996248 Document Type: Article

Times cited : (64)

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