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Applied Physics Letters

Volumn 96, Issue 4, 2010, Pages

Anisotropy of tensile stresses and cracking in nonbasal plane Al xGa1-xN/GaN heterostructures

(6) Young, Erin C a Romanov, Alexey E a,b Gallinat, Chad S a Hirai, Asako a Beltz, Glenn E a Speck, James S a

a University of California (United States)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRESS; CRITICAL THICKNESS; EXPERIMENTAL OBSERVATION; FREESTANDING GAN SUBSTRATES; HETEROSTRUCTURES; IN-PLANE; MISFIT DISLOCATIONS; NON-BASAL PLANE; NON-POLAR; NORMAL STRESS; ORIENTED FILMS; SEMIPOLAR; STRESS STATE;

ALUMINUM; ANISOTROPY; CRACKING (CHEMICAL); GALLIUM NITRIDE; HETEROJUNCTIONS; STRESS RELIEF; TENSILE STRESS;

GALLIUM ALLOYS;

EID: 75749140215 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3276561 Document Type: Article

Times cited : (23)

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