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Volumn 5, Issue 2, 2008, Pages 563-565
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Effect of deposition conditions on the growth rate and electrical properties of ZnO thin films grown by MOCVD
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPETITIVE ADSORPTION;
DEPOSITION CONDITIONS;
ELECTRICAL PROPERTY;
GASPHASE;
GLASS SUBSTRATES;
GROWTH SURFACES;
HIGH PRESSURE;
MOCVD;
MOLAR RATIO;
OXYGEN SPECIES;
PRE-REACTIONS;
REACTANT SPECIES;
REACTOR PRESSURES;
ZNO THIN FILM;
ADSORPTION;
CARRIER CONCENTRATION;
CHEMICAL VAPOR DEPOSITION;
DEPOSITION;
ELECTRIC PROPERTIES;
METALLIC FILMS;
OPTICAL FILMS;
OXYGEN;
PRESSURE EFFECTS;
SUBSTRATES;
THIN FILMS;
ZINC;
ZINC OXIDE;
GROWTH RATE;
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EID: 43149121832
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200776827 Document Type: Conference Paper |
Times cited : (3)
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References (12)
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