Homoepitaxial ZnO thin films by PLD: Structural properties

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 10, 2008, Pages 3280-3287

  Lorenz, M ^a   Wagner, G ^a   Rahm, A ^a,c   Schmidt, H ^a,d   Hochmuth, H ^a   Schmid, H ^b   Mader, W ^b   Brandt, M ^a   Von Wenckstern, H ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b UNIVERSITY OF BONN   (Germany)

^c Solarion AG   (Germany)

^d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONVERGENT-BEAM ELECTRON DIFFRACTION; CROSS SECTION; DISLOCATION-FREE; DOPING CONCENTRATION; HOMOEPITAXIAL; HOMOEPITAXIAL FILMS; IN-PLANE; IN-PLANE STRAINS; INTENSITY FRINGES; OUT-OF-PLANE; ROCKING CURVES; SMOOTH INTERFACE; STRUCTURAL QUALITIES; TEM; ZNO; ZNO FILMS; ZNO SINGLE CRYSTALS; ZNO THIN FILM;

DISLOCATIONS (CRYSTALS); METALLIC FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR SWITCHES; SINGLE CRYSTALS; TECHNICAL PRESENTATIONS; ZINC OXIDE;

FILM GROWTH;

EID: 70350038775     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779504     Document Type: Conference Paper

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