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Applied Physics Letters

Volumn 97, Issue 8, 2010, Pages

Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a -plane ZnO substrates

(6) Chauveau, J M a,b Teisseire, M a Kim Chauveau, H a Deparis, C a Morhain, C a Vinter, B a,b

a CNRS (France)

b UNIVERSITÉ CÔTE D'AZUR (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; HETEROEPITAXIAL; HOMOEPITAXIAL; HOMOEPITAXY; LUMINESCENCE INTENSITY; NON-POLAR; PHOTOLUMINESCENCE PROPERTIES; QUANTUM WELL; STRONG ENHANCEMENT; STRUCTURAL DEFECT; THERMAL STABILITY; UV EMISSIONS; ZNO SUBSTRATE;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; SURFACE DEFECTS; ZINC; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77956200563 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3481078 Document Type: Article

Times cited : (75)

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