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Volumn 516, Issue 23, 2008, Pages 8244-8247
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Hydrothermal growth and characterization of ZnO thin film on sapphire (0001) substrate with p-GaN buffer layer
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Author keywords
Epitaxy; Hydrothermal deposition; p type gallium nitride; Photoluminescence; Thin films; X ray diffraction; Zinc oxide
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Indexed keywords
AMMONIUM COMPOUNDS;
AMORPHOUS MATERIALS;
BUFFER LAYERS;
CORUNDUM;
FILM GROWTH;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
IMAGING TECHNIQUES;
METALLIC FILMS;
NITRATES;
OPTICAL FILMS;
OPTICAL MICROSCOPY;
OPTICAL PROPERTIES;
OPTICAL WAVEGUIDES;
SEMICONDUCTING CADMIUM TELLURIDE;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING ZINC COMPOUNDS;
SOLIDS;
SOLUTIONS;
SUBSTRATES;
THICK FILMS;
THIN FILMS;
VAPOR DEPOSITION;
X RAY DIFFRACTION ANALYSIS;
ZINC;
ZINC ALLOYS;
ZINC OXIDE;
ZINC SULFIDE;
AMMONIUM HYDROXIDES;
AQUEOUS SOLUTIONS;
C -AXIS;
EPITAXIAL RELATIONSHIPS;
EPITAXY;
GAN/SAPPHIRE;
HYDROTHERMAL DEPOSITION;
HYDROTHERMAL GROWTH;
HYDROTHERMAL TECHNIQUES;
MONOCRYSTALLINE;
P-TYPE GALLIUM NITRIDE;
PHOTOLUMINESCENCE;
ROOM-TEMPERATURE PHOTOLUMINESCENCE;
SINGLE-CRYSTALLINE;
SINGLE-STEP;
WURTZITE;
X-RAY DIFFRACTION;
ZINC NITRATES;
ZNO FILMS;
ZNO THIN FILMS;
MOLECULAR BEAM EPITAXY;
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EID: 50849085163
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2008.03.001 Document Type: Article |
Times cited : (15)
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References (28)
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