Hole transport in p-type ZnO films grown by plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 89, Issue 23, 2006, Pages

  Sun, J W ^a,b   Lu, Y M ^a   Liu, Y C ^c   Shen, D Z ^a   Zhang, Z Z ^a   Li, B H ^a   Zhang, J Y ^a   Yao, B ^a   Zhao, D X ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; TRANSPORT PROPERTIES; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

DEFORMATION POTENTIAL SCATTERING; EXPERIMENTAL DATA; HALL MOBILITY;

SEMICONDUCTING FILMS;

EID: 33845419073     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2398908     Document Type: Article

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